PUBLISHED PAPERS #01.10
| Aydin Alekperov, Razim Bayramli. The Effect of Er Dopant Atoms on the Photoelectric Properties of Monocrystal GaS |
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| Abstract. Monocrystal GaS is a wideband, photosensitive semiconductor material in visible and ultraviolet regions of the spectrum. To expand the possibilities of application of this crystal, Er atoms were used as dopant atoms. In layered semiconductor crystals, a covalent-ionic bond between the atoms on the surface and a relatively weak Van der Waals bond exist between the layers. Therefore, it is possible to intercalate impurity atoms with different ionic radii into these crystals. The mentioned properties can also be attributed to the p-GaS crystal, which is one of the AIIIBVI type semiconductors. Studies have shown that Er atoms, a rare earth metal, also affect the photoconductivity spectrum of the p-GaS layered monocrystal. The maximum of the photoconductivity spectrum of GaS and GaS:Er layered monocrystals coincides with the edge of the fundamental absorption region and is equal to hν=2,45 eV. The width of the bandgap at room temperature was Eg=2,4 eV. The photosensitivity region of the layered monocrystals covered the wavelength interval of 450÷630 nm, the main maximum was observed in λ=486 nm, and additional maxima were recorded at wavelengths of λ=463 nm and λ=543 nm. With increasing temperature, the photocurrent increases, λmax shifts towards the long-wave region. |
| Keywords: layered monocrystal, rare earth metal, photoconductivity, intercalation, exciton |
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| DOI: https://doi.org/10.30546/MaCoSEP2025.017 |